Measure critical dimensions and evaluate line edge and line width roughness in semiconductor manufacturing workflows.
Critical Dimension Analysis
Rapidly detect peaks and trenches
Analyze profiles, profile series, or full surface topography—including multi-channel data from SPM or profilometry
Compute key parameters for critical dimension (CD) analysis: height, CD at top/middle/bottom, sidewall angle, pitch, width/pitch ratio, and more
Display the surface structure and corresponding measurement values for each profile or pattern
Ensure quality control by performing statistical evaluations on each identified pattern
Use the Refine option to enhance statistical relevance by excluding outliers (e.g., profiles with abnormal width or height, or first/last peaks or trenches)
Note: Profiles and surfaces must be correctly leveled prior to running critical dimension analysis.
Line Edge Roughness
Evaluate line edge roughness (LER) and line width roughness (LWR) on the edges of bands found in SEM imagery
Use several detection techniques:
Thresholding
The Canny edge detection method (ideal for compensating edge charging irregularities)
Band detection between trims (for nearly uniform grayscale levels)
Calculate CD-related parameters such as band/pattern width and pitch
Available as an optional module with :
- MountainsMap® Imaging Topography
- MountainsMap® Expert
- MountainsMap® Premium
- MountainSEM® Color
- MountainSEM® Expert
- MountainSEM® Premium
- MountainsSPIP® Expert
- MountainsSPIP® Premium
- MountainsSpectral® Premium
- MountainsImage® Starter
- MountainsImage® Expert
- MountainsImage® Premium
- MountainsLab® Expert
- MountainsLab® Premium
