Critical Dimensions & Trenches Module

Measure critical dimensions and evaluate line edge and line width roughness in semiconductor manufacturing workflows.

Critical Dimension Analysis

  • Rapidly detect peaks and trenches

  • Analyze profiles, profile series, or full surface topography—including multi-channel data from SPM or profilometry

  • Compute key parameters for critical dimension (CD) analysis: height, CD at top/middle/bottom, sidewall angle, pitch, width/pitch ratio, and more

  • Display the surface structure and corresponding measurement values for each profile or pattern

  • Ensure quality control by performing statistical evaluations on each identified pattern

  • Use the Refine option to enhance statistical relevance by excluding outliers (e.g., profiles with abnormal width or height, or first/last peaks or trenches)

Note: Profiles and surfaces must be correctly leveled prior to running critical dimension analysis.

Line Edge Roughness

  • Evaluate line edge roughness (LER) and line width roughness (LWR) on the edges of bands found in SEM imagery

  • Use several detection techniques:

    • Thresholding

    • The Canny edge detection method (ideal for compensating edge charging irregularities)

    • Band detection between trims (for nearly uniform grayscale levels)

  • Calculate CD-related parameters such as band/pattern width and pitch

Available as an optional module with :

  • MountainsMap® Imaging Topography
  • MountainsMap® Expert
  • MountainsMap® Premium
  • MountainSEM® Color
  • MountainSEM® Expert
  • MountainSEM® Premium
  • MountainsSPIP® Expert
  • MountainsSPIP® Premium
  • MountainsSpectral® Premium
  • MountainsImage® Starter
  • MountainsImage® Expert
  • MountainsImage® Premium
  • MountainsLab® Expert
  • MountainsLab® Premium